Monte Carlo Study of Transport Properties of InN
نویسندگان
چکیده
We use a Monte Carlo approach to investigate the electron transport in Indium Nitride. Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) are conducted. All relevant scattering mechanisms are accounted for. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.
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